CDE 2OO13a Conferencia de

Disposit ivos ElecijronicosGranada, 15 y 16 de febrA de 2001

Organiza:

Departamento de ElectrGnica yTecnologia de Computadores

Universidad de Granada18071 Granada

UB/TIB Hannover 89123 868 67X

Entidades colaboradoras:

HK (M)M0NHU60NCOMMNMTB o

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INDICE DE COMUNICACIONES Y SESIONESCOMMUNICATION AND SESION INDEX

A-l: TECNICAS DE CARACTERIZACION - CHARACTERISATION TECHNIQUES

Mechanical Stress on PECVD Silicon Oxides for Integrated Optics Applications 1M. Riera', B. Diaz2, A. Llobera', J.A. Rodriguez1, C. Dominguez''institut de Microelectronica de Barcelona (1MB), (CNM-CS1C). Spain2Facultad de Fisica, Universidad de la Habana. Cuba

Electrical Properties of Anodic Tantalum Pentoxide: A SystematicApproach for Physical Characterisation of Thin-Film Dielectrics 5S. Duenas1, H. Castdn', J. Barbolla1, R.R. Kola2, P.A. Sullivan2

'Departamento de Electricidad y Electronica, E.T.S.I.Telecomunicacion, Universidad de Valladolid. Spain2Bell Laboratories, Lucent Technologies, Murray Hill. USA.

Conductance Transient Technique: A Suitable Method to QuantifyDisorder- Induced-Gap States Profiles on Metal-Insulator-Semiconductor Structures 9H. Castdn1, S. Duenas', J. Barbolla1, E. Redondo2, N. Blanco2,1. Mdrtil2, G Gonzalez-Diaz2

'Departamento de Electricidad y Electronica, E.T.S.I.Telecomunicacion, Universidad de Valladolid. Spain2Dpto de Fisica Aplicada III (Electricidad y Electronica), Fac. de Ciencias Fisicas,Universidad Complutense, Madrid.

In-Line Characterisation in Yield Loss Analysis: Particle Event at Implant Process 13M.C. Morilla, J. Arriaza, C. MataLucent Technologies Microelectronica. Tres Cantos (Madrid). Spain.

Characterisation and Optimisation of ARROW Structures 17A. Llobera1,1. Salinas2, F. Prieto3,1. Garces2, L. Lechuga3, A. Calle3, C. Dominguez1

'institut de Microelectronica de Barcelona (1MB), (CNM-CS1C). Spain.2Departamento de Fisica Aplicada, Universidad de Zaragoza. Spain.3Instituto de Microelectronica de Madrid (CNM-CSIC). Spain.

B-l: DISPOSITIVOS MOS - MOS DEVICES

Monte Carlo Analysis of a 0.3-p.m Gate Length MOSFET 21R. Rengel, D. Pardo, M.J. MartinDepartamento de Fisica Aplicada, Universidad de Salamanca. Spain

NMOS Transistor Degradation During Gate OxideFowler-Nordheim Tunnelling Injection 25J. M. Rafl, F. CampabadalInstitut de Microelectronica de Barcelona (1MB), (CNM-CSIC). SPAIN

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Breakdown Voltage of Ultra Thin SOI and SOS Devices 29J.Roig', M. Vellvehi', D.Flores1, J.Rebollo1, J.Millan1,S.Krishnan2, M. M. De Souza2, E. M. Sankara Narayanan .'institut de Microelectronica de Barcelona (1MB); (CNM-CSIC), Spain.2Emerging Technologies Research Centre, De Montfort University, Leicester, UK

Tunnel Current Through Gate Oxides 33F. Jimenez-Molinos, F. Gdmiz, A. Palma, P. Cartujo, J.A. Lopez-VillanuevaDepartamento de Electronica y Tecnologia de Computadores. Universidad de Granada. Spain.

Electron Transport in Single-Gate Silicon-On-InsulatorInversion Layers. A Monte Carlo Study 37P. Cartujo-Casinello, F. Gdmiz, J.B. Rolddn, J.A. Lopez-Villanueva,J.E. Carceller, P. CartujoDepartamento de Electronica y Tecnologia de Computadores. Universidad de Granada. Spain.

C-l: SENSORES Y ACTUADORES I - SENSORS AND A CTUA TORS I

Fabrication of Highly Selective SnO2 Ethanol Sensors 41G. Molas1, E. Llobet1, F. Masana2, J. Calderer2, X. Vilanova1,J. Brezmes', J.E. Sueiras3, X. Correig1

'Departament d'Enginyeria Electronica, Universitat Rovira i Virgili. Tarragona. Spain.2Departament d'Engineria Electronica. Universitat Politecnica de Catalunya. Barcelona. Spain3Departament d'Enginyeria Quimica, Universitat Rovira i Virgili. Tarragona. Spain

Design and Fabrication of CMOS CompatibleThermoelectric IR Sensors for a Gas Analysing System 45C. Calaza', L. Fonseca2, M. Moreno1, S. Marco1, C. Cane2,1. Grdcia2.' Instrumentation and Communication Laboratory (SIC) Departament d'Electronica,Universitat de Barcelona. Spain.2Institut de Microelectronica de Barcelona (1MB); (CNM-CSIC), Spain

Thermal and Mechanical Characterization of a Micromechanised Gas Sensor 49J. Puigcorbe', A. Vila', I. Grdcia2, C. Cane2, J.R. Morante''EME-Electronic Materials and Engineering, Department of Electronics, Universitat de Barcelona, Spain.Mnstitut de Microelectronica de Barcelona (1MB); (CNM-CSIC), Spain

An "Electronic Nose" for the Assessment of the Quality of Spanish Olive Oils 53J. Martinez', J. Souto1, M.L. Rodriguez-Mendez2, J.A. de Saja''Dpto. Fisica de la Materia Condensada. Facultad de Ciencias. Universidad de Valladolid. Spain.2Dpto. de Quimica lnorganica. E.T.S. Ingenieros Industrials. Universidad de Valladolid. Spain.

SAW Sensors for the Detection of Octane 57M.J. Fernandez', J.L. Fontecha1, M.C. Horrillo1,1. Sayago', M. Garcia1,1. Grdcia2

'institute de Fisica Aplicada, CSIC, Serrano 144, 28006 Madrid, Spain2Centro Nacional de Microelectronica (IMB-CSIC), 08193 Bellaterra, Spain

A-2: CELULAS SOLARES I - SOLAR CELLS I

A Monolithic Approach to Silicon Photovoltaic Miniarrays 61S. Bermejo, P. Ortega, L. CastanerGrupo de Dispositivos Semiconductores (GDS). Universidad Politecnica de Cataluna .Departamentode Ingenieria Electronica. Barcelona. Spain

(p) a-SiC:H / (n) c-Si Heterojunction Solar Cells: Light and Dark Characteristics 65J. Pallares1,1. Martin', L.F. Marsal', A. Orpella2, D. Bardes2, J. Puigdollers2,R. Alcubilla2, R.E.I. Schropp3

'Departament d'Enginyeria Electronica. Universitat Rovira i Virgili. Tarragona. Spain2Departament d'Enginyeria Electronica. Universitat Politecnica de Catalunya. Barcelona. Spain3Debye Institute, Interface Physics, Utrecht University, The Netherlands

Characterization of Multichip Module Photovoltaic Minipanels 69P. Ortega', S. Bermejo2, L. Castaner2

'GDS Escuela Politecnica de Vilanova i la Geltni. Barcelona. Spain2GDS Universidad Politecnica de Cataluna. Departamento de Ingenieria Electronica. Barcelona. Spain

Development of Thin Monocrystalline Silicon Solar Cells 73R.M. Lago-Aurrekoetxea, C. del Canizo, A. Marti, A. LuqueInstituto de Energia Solar - ETSI Telecomunicacion - Universidad Politecnica de Madrid. Spain.

A Novel Light Source Position Sensor 77M. Dominguez1,1. Ameijeiras1, L. Castaner , J.M. Quero , A. Guerrero2, L.G. Franquelo2

'Electronic Engineering Dept, Semiconductor Devices Group, E.T.S. de Ingenieros de Telecomunicacionde Barcelona. SpainElectronic Engineering Dept, E.S. Ingenieros de Sevilla. Spain

B-2: FETs DE HETEROESTRUCTURA - HETEROSTRUCTURE FETs

Experimental and Theoretical Study of Backgating in Si/SiGeModulation-Doped Field-Effect Transistors 81J.E. Velazquez1, W. Jeamsaksiri2, J.C Yeoh2, T.J. Thornton, K. Fobelets2

'Dept. de Fisica Aplicada Universidad de Salamanca, Spain.2Dept. of Electrical and Electronic Engineering, Imperial College, London, UK.3College of Engineering and Applied Science, Dept. of Electrical Engineering,Arizona State University, Tempe, USA

Design Optimisation of Ultra-Short Gate HEMTs Using Monte Carlo Simulation 85J. Mateos1, T. Gonzalez', D. Pardo', V. Hoel2, S. Bollaert2, A. Cappy2

'Departamento de Fisica Aplicada, Universidad de Salamanca. Spain.2Institut d'Electronique et Microelectronique du Nord.Departement Hyperfrequences et Semiconducteurs.Villeneuve D'Ascq, France

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.59Mobility Analysis in MODFETs with Variable Channel ThicknesS. Fernandez de Avila', F. Gonzdlez-Sanz2, E. Munoz2.'Departamento de Ciencia y Tecnologia de Materiales. Division de Tecnologia Electronica.Universidad Miguel Hernandez, Elx, Alicante. Spain2Departamento de Ingenieria Electronica, E.T.S.I.T., Universidad Politecnica de Madrid. Spain

Modeling of Tunnel Effect in a P-HFET 93B. Gonzalez', A. Hernandez', F. Gonzdlez-Sanz2, S. Fernandez de Avila2, A. Nunez .'lUMA & Departamento de Ingenieria Electronica y Automatica.Universidad de Las Palmas de Gran Canarias. Spain2Departamento de Ciencia y Tecnologia de los Materiales.Universidad Miguel Hernandez, Elx, Alicante. Spain

Plasma Assisted MBE Grown AlGaN/GaN High Electron Mobility Transistors 97J. Ristic', A. Jimenez', J.A. Garrido', E. Calleja1, E. Munoz1, J. Grajal'Dpto. Ingenieria Electronica, E.T.S.I.Telecomunicacion, Universidad Politecnica de Madrid. Spain2Dpto. Senales, Sistemas y Radiocomunicaciones, E.T.S.I.Telecomunicacion,Universidad Politecnica de Madrid. Spain

C-2: SENSORES Y ACTUADORES II - SENSORS AND ACTUATORS II

Development of a Miniaturised Double Channel SurfacePlasmon Resonance Sensor for Biosensing Applications 101F. Prieto, A. Calle, B. Sepulveda, L.M. Lechuga.Institute) de Microelectronica de Madrid (CNM-CSIC). Tres Cantos, Madrid. Spain

Application of Ion Selective Field Effect Transistors in Food Industry and Medicine 105N. Abramova, C. Jimenez, A. Bratov, C. DominguezCentre Nacional de Microelectronica, Campus Universidad Autonoma de Barcelona. Spain

Impedance Measurements for the Development of Moisture Sensors in Brake Fluids 109D. Puente, I. Ayerdi, E. Castano, F.J. Gracia.Centre de Estudios e Investigaciones Tecnicas de Gipuzkoa (CEIT). San Sebastian, Spain

Microflow Systems for Chemical Analysis 113J. Bausells', J. Montserrat1, C. Saenz', A. Errachid1, M. Baeza2, J. Alonso2

'Centra Nacional de Microelectronica (IMB-CSIC), Campus UAB, Bellaterra. Spain2 Unitat de Quimica Analitica, Departament de Quimica,Universitat Autonoma de Barcelona, Bellaterra. Spain

Instrumentation System Applied to the ISFET/MEMFETs Sensor's Characterization 117S. Casans', A.E. Navarro', D. Ramirez', A. Baldi, N. Abramova2

'Laboratorio de Electronica Industrial e Instrumentation (LEII). Universidad de Valencia. Spain2Instituto de Microelectronica de Barcelona. Centra Nacional de Microelectronica. CSIC. Spain

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A-3: PROCESOS TECNOLOGICOS DE FABRICACION - TECHNOLOGICALFABRIC A TION PROCESSES

Cumulative Damage Model in Atomistic Ion Implant Simulation 121J. Ldzaro, J.M. Herndndez-Mangas, L. Bailon, J. Arias, M. Jaraiz.Departamento de Electricidad y Electronica, Universidad de Valladolid. Spain.

The Effect of Carbon/Self-Interstitial Clusters on Carbon Diffusionin Silicon Modeled by Kinetic Monte Carlo Simulations 125R. Pinacho1, M. Jaraiz1, P. Castrillo1, J. Barbolla',H.J. Gossmann , G.H. Gilmer2, J.L. Benton2

'Dto de Electricidad y Electronica. Universidad de Valladolid. Spain.2Bell Laboratories, Lucent Technologies, Murray Hill. USA

Boron Nitride Synthesis by B+, C+ and N+ Implantation in Silicon 129L. Barbadillo, M. Cervera, M.J. Hernandez, P. Rodriguez, J. PiquerasLaboratorio de Microelectronica. Facultad de Ciencias. Universidad Autonoma de Madrid. Spain.

Oxygen Partial Pressure and Annealing TemperatureDependencies on Formation of W=O Bonds in Thin WO3 Films 133C. Bittencourt', R. Landers', E. Llobet2, J. Calderer3, X. Correig2

'institute) de Fisica 'Gleb Wataghin', Universidade de Campinas, Campinas, SP, Brazil2Departament d'Enginyeria Electronica. Universitat Rovira i Virgili. Tarragona. Spain3Departament d'Enginyeria Electronica. Universitat Politecnica de Catalunya. Barcelona, Spain

Boron Clustering: Activation and Deactivation of B in Si 137L. Pelaz, G.H. Gilmer2, HJ. Gossmann, M. Jaraiz, LA. Marques', L. Bailon', J. Barbolla'Dept. Electricidad y Electronica, Universidad de Valladolid. Spain.2Bell Laboratories, Lucent Technologies, Murray Hill. U.S.A.

B-3: HBTs Y OTROS DISPOSITIVOS DE MICROONDAS - HBTs AND OTHERMICROWA VE DEVICES

HBT Modeling with Arbitrary Injection Level and Degenerate Semiconductors 141J.M. Lopez-Gonzalez, P. Garcias-Salvd, LI. Prat.Grup de Dispositius Semiconductors, Departament d'Enginyeria Electronica,Universitat Politecnica de Catalunya, Barcelona. Spain

Influence of High-Injection Conditions on the NoiseBehavior in Si BJT's and SiGe HBT's at RF Frequencies 145M.J. Martin Martinez, T. Gonzalez, D. PardoDepartamento de Fisica Aplicada, Universidad de Salamanca. Spain

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Computational Aspects of the Parallel Implementation for 3D BJT Simulator 149A.J. Garcia-Loureiro', T.F. Pena', J.M. Lopez-Gonzalez2, LI. Prat2

'Departamento de Electronica y Computation. Univ. Santiago de Compostela. Spain.2Departament d'Enginyeria Electronica. Univ. Politecnica de Catalunya. Barcelona. Spain

Analytical Solitons in Nonlinear Transmission Lines Loaded withHeterostructure Barrier Varactors: Application to Terahertz Generators 153X. Oriols, F. MartinDepartament d'Enginyeria Electronica. Universitat Autonoma de Barcelona. Bellaterra. (Barcelona). Spain

Base Current Analysis of Annealed a-SiCx:H Emitter Bipolar Transistors 157A. Orpella, J. Puigdollers', D. Bardes1,1. Martin , L.F. Marsal2, J. Pallares2, R. Alcubilla'Universitat Politecnica de Catalunya, Departament d'Enginyeria Electronica. Spain2Universitat Rovira i Virgili, Departament d'Enginyeria Electrica, Electronica i Automatica. Spain

C-3: SENSORES Y ACTUADORES III - SENSORS AND ACTUATORS III

An Ultrasonic Sensor Composed But Not Complex 161G. Trivino, J.C. Crespo.Departamento de Tecnologia Fotonica. Facultad de Informatica. Universidad Politecnica de Madrid. Spain

Contactless Potentiometer Based on Colossal Magnetoresistance Thin Films 165O.J. Gonzalez, E. Castaho, F.J. GraciaCentro de Estudios e Investigaciones Tecnicas de Gipuzkoa (CEIT). San Sebastian. Spain

A Compact Low Cost Air Flow Sensor 169M. Dominguez, F. Masana, V. Jimenez, S. Bermejo, J. Amirola, L. CastanerGDS, Universidad Politecnica de Cataluna, Barcelona. Spain

Ferrofluidic Components 173R. Perez-Castillejos', J.A. Plaza', J. Esteve , M.C. Acero', A. Menz2, W. Benecke2,N. Garcia3, J. Higuero3, T. Diez-Caballero3

'Centre Nacional de Microelectronica (CNM-CSIC) Campus UAB. Bellaterra (Barcelona). Spain.2Institut fur Mikrosensoren, -aktuatoren und -systeme (IMSAS), University of Bremen. Germany3BioSensores S.L., Moncofa (Castellon). Spain.

Micromachined Thermal Flow Sensor Based on Polysilicon Resistors 177N. Sabate, I. Grdcia', C. Cane', J. Puigcorbe2, J.R. Morante2

'Centre Nacional de Microelectronica, Campus UAB, 08193 Bellaterra, Barcelona. Spain2Departament d'Electronica, Universitat de Barcelona (EME-UB). Barcelona. Spain

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A-4: CELULAS SOLARES II - SOLAR CELLS II

25-30 % Efficient 1000-Sun GaAs Solar Cells for Terrestrial Applications 181C. Algora, I. Rey-Stolle, E. Ortiz, V. DiazInstitute) de Energia Solar, E.T.S.I. Telecomunicacion. Universidad Politecnica de Madrid. Spain.

AlGaAs/GaAs Solar Cells with Contact Layer Grown by LT-LPE 185E. Ortiz1, V.P. Khvostikov2, C. Algora1,1. Rey-Stolle1.'institute) de Energia Solar. E.T.S.I. Telecomunicacion. Universidad Politecnica de Madrid. Spain2A.F. Ioffe Physico-Technical Institute, St. Petersburg. Russia

Recent Improvements in Gallium Antimonide (GaSb)Thermophotovoltaic Converters Manufacture 189D. Martin, C. AlgoraInstitute de Energia Solar. E.T.S.I. Telecomunicacion. Universidad Politecnica de Madrid. Spain

Modelling of the Intermediate Band Width in theQuantum Dot Intermediate Band Solar Cell 193L. Cuadra, A. Marti, A. LuqueInstitute) de Energia Solar. Departamento de Electronica Fisica. E.T.S.I. Telecomunicacion.Universidad Politecnica de Madrid. Spain

Theory of the Absorption Coefficients in the Intermediate Band Solar Cell 797L. Cuadra, A. Marti, A. LuqueInstituto de Energia Solar. Departamento de Electronica Fisica. E.T.S.I. Telecomunicacion.Universidad Politecnica de Madrid. Spain

B-4: NANOTECNOLOGIA - NANOTECHNOLOGY

Exploratory Observations of the Conduction Properties of UltrathinSK>2 Films with a Conductive Atomic Force Microscope 201M. Porti, X. Blasco, R. Rodriguez, M. Nafria, X. AymerichDept. Enginyeria Electronica. Universitat Autonoma de Barcelona, Bellaterra. Spain

Monitoring the Degradation of Ultra Thin S1O2 Filmsfrom SILC Data and a Two-Step Stress Method 205R. Rodriguez, M. Porti, X. Blasco, M. Nafria, X AymerichDept. Enginyeria Electronica. Universitat Autonoma de Barcelona, Bellaterra. Spain

Electrical Characterization of Si Nanocrystals Embedded in SK>2 Thin Films 209O. Gonzdlez-Varona', B. Garrido1, A. Perez-Rodriguez1,C. Bonafos2, J. Montserrat3, J.R. Morante'EME, Unitat Associada CNM-CSIC, Departament d'Electronica, Universitat de Barcelona. Spain2CEMES/CNRS, Toulouse. France3Centre Nacional de Microelectronica CNM-CSIC, Campus UAB, Bellaterra (Barcelona). Spain

Optical Transitions and Excitonic Recombinationin InAs/InP Self-Organized Quantum Wires 213B. Alen1, J. Martinez-Pastor1, A. Garcia-Cristobal1, L. Gonzalez2, J.M. Garcia2

'instituto de Ciencia de los Materiales, Universidad de Valencia, .Spain.2Instituto de Microelectronica de Madrid (CNM, CSIC), Tres Cantos, Madrid, Spain.

Carrier Recombination in InAs/GaAs Self-AssembledQuantum Dots under Resonant Excitation Conditions 217C. Rudamas1, J. Martinez-Pastor1, P. Roussignol2, J.M. Garcia3, L. Gonzalez3

'institute de Ciencia de los Materiales, Universidad de Valencia. Spain.2Laboratoire de Physique de la Matiere Condensee de l'Ecole Normale Superieure, Paris. France,'institute de Microelectronica de Madrid (CNM, CSIC), Tres Cantos, Madrid. Spain

C-4: SENSORES Y ACTU ADORES IV - SENSORS AND ACTUATORS IV

Mechanical Coupling as Excitation of Microelectromechanical Resonators 221A. Rodriguez, J. Amirola, R. Nadal, L. CastanerGrupo de Dispositivos Semiconductores (GDS). Universidad Politecnica de CatalunaDepartamento de Ingenieria Electronica. Barcelona. Spain

Analysis of the Stable Operation Range inPulsed Current Drive of Electrostatic Actuators 225J. Pons, L. Castaner, A. Rodriguez, R. Nadal-GuardiaSemiconductor Devices Group (GDS), E.T.S. d'Enginyeria de Telecomunicacio de Barcelona.Universitat Politecnica de Catalunya., Barcelona. Spain

Design and Fabrication of Magnetic Microactuators in Si technology 229S. Martinez1, N. Yaakoubi12, P. Gorostiza', R. Perez2, C Serre', A. Perez-Rodriguez',J. Esteve2, J.R. Morante''Departament d'Electronica, Unitat Associada al CNM-CSIC, Universitat de Barcelona, Spain.2Centre Nacional de Microelectronica, CNM-CSIC Campus UAB, Bellaterra (Barcelona), Spain.

Electromechanical Model of a Resonating Nano-CantileverBased Sensor for Mass Detection in the Atto-Gram Scale 233G. Abadal', Z.J. Davis2, B. Helbo2, A. Boisen2, R. Ruiz13, F. Perez-Murano'3,N. Barniol', F. Campabadal3, J. Esteve3, E. Figueras3

'Dept. Enginyeria Electronica, Universitat Autonoma de Barcelona, Bellaterra (Barcelona), Spain.2Mikroelektronik Centret, Technical University of Denmark, Lyngby, Denmark.'institute de Microelectronica de Barcelona, CNM-CSIC. Campus UAB, Bellaterra, Spain

Development of Silicon Resonator on Surface Micromachining 237M. Morata, J.A. Plaza, M.A. Benitez, E. Figueras, C. CaneCentro Nacional de Microelectronica. IMB-CNM.(CSIC). Campus UniversidadAutonoma de Barcelona. Bellaterra. Spain

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A-5: TECNOLOGIA DE DISPOSITIVOS - DEVICE TECHNOLOGY

Design and Processing of SAW Devices on A1N Epilayers 241T. Palacios', F. Calle', E. Monroy1, O. deAbrif, C. Prieto3, C. Zaldo3

'institute de Sistemas Optoelectronicos y Microtecnologia and Dpto. de Ingenieria Electronica,ETSI Telecomunicacion, Universidad Politecnica de Madrid. Spain2Instifuto de Sistemas Optoelectronicos y Microtecnologia and Dpto. de Fisica Aplicada, ETSI Telecomunicacion,Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain'institute de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain

Thin-Film Flexible Microelectrodes for Implantable Devices 245C. de Haro, J. Munoz, C. DominguezInstitute of Microelectronics of Barcelona, CNM-CSIC, Campus UAB. Spain

Polysilicon Gate Deposition Defect Caused by Low Level Contamination 249K. Terryll, T. Iglesias, M.A. Garcia, P. DominguezLucent Technologies Microelectronics, Tres Cantos, Madrid, Spain

High Temperature Characteristic of 1.3(im GalnAsP Tensile-StrainedMultiquantum Well Laser with GalnAsP/InP Short-Period Superlattice Barriers 253M.L. Dotor, D. Golmayo, P.A. Postigo, H. Gomez, J. Weber, A. Calle, J.D. GomezInstitute de Microelectronica de Madrid. Tres Cantos, Madrid. Spain

Advanced Transient Voltage Suppressor (TVS) Devices for Electronic Systems 257S. Hidalgo, D. Flores, J. Rebollo, X. Jordd, P. GodignonCentra Nacional de Microelectronica (IMB-CNM-CSIC). Campus de la UAB, Bellaterra (Barcelona). Spain

B-5: UNIONES P-N Y DETECTORES DE RADIACION - P-N JUNTIONS ANDRADIA TION DETECTORS

Simulation of Recombination Current Mechanismsin Diodes with Multiple Level Traps 261R. Cabre1, A. Orpella, J. Puigdollers2, R. Alcubilla2, L.F. Marsal1, J. Pallares''Escola Tecnica Superior d'Enginyeria. Dpt. d'Enginyeria Electronica. Universitat Rovira i Virgili. Tarragona. Spain2Departament d'Enginyeria Electronica. Universitat Politecnica de Catalunya. Barcelona. Spain

Microscopic Analysis of Generation-RecombinationNoise Upconversion in Semiconductors 265S. Perez , T. Gonzalez', S.L. Delage2, J. Obregon3

'Departamento de Fisica Aplicada, Universidad de Salamanca. Spain2THOMSON-CSF/Laboratoire Central de Recherches, Orsay, France3IRCOM, CNRS 123, Limoges, France

Diode Analysis under Neutron Radiation 269F.J. Franco, J.P. Santos, A.H. Cachero, J. Lozano, M.A. Martin, A. Paz, J.A. AgapitoUniversidad Complutense (UCM), Electronics Dept., Madrid, Spain

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Influence of Annealing on the Conduction Mechanismsin (p) a-SiC/(n) c-Si Heterojunction Diodes 273I. Martin', L.F. Marsal', J. Pallares', A. Orpella2, M. Vetter2,D. Bardes2, J. Puigdollers2, R. Alcubilla2

'Dept. of Electronic Engineering. Universitat Rovira i Virgili, Tarragona. Spain.2Departament d'Enginyeria Electronica. Universitat Politecnica de Catalunya. Barcelona. Spain

Radiation Hardness of CNM Silicon Detectors Subjected to Proton Irradiation 277C. Martinez, J.M. Rafi, M. Lozano, F. Campabadal, J. Santander, M. Ulldn, A. MorenoInstitut de Microelectronica de Barcelona (1MB), CNM-CSIC. Campus UAB, Bellaterra (Barcelona). Spain

SESI6N POSTER - POSTER SESSION

Towards Atomic Force Microscopy Grown SiO2 Based Nanodevices 281X. Blasco, D. Hill, M. Porti, R. Rodriguez, M. Nafria, X. Aymerich.Dept. Enginyeria Electronica, Universitat Autonoma de Barcelona. Bellaterra (Barcelona). Spain

Dry Versus Wet Capacitance - Voltage (C-V)Profiling of Semiconductor Quantum Wells 285D. Biswas, J. Martinez PastorInstitute de Ciencia de los Materiales, Universidad de Valencia. Spain.

Effects of the Size and Shape of GaAs Solar Cells on Recombination Losses 289V. Diaz, C. AlgoraInstitute de Energia Solar-E.T.S.I.T. Telecomunicacion. Madrid. Spain

Extraction of Solar Cell Parameters fromthe Internal Quantum Efficiency using Matlab 293S. Silvestre, A. Bravo, L. CastanerGDS, Electronics Engineering Department, Universidad Politecnica de Catalunya. Barcelona. Spain

Improvement of a Local BSF Solar Cell Fabrication Process 297L.J. Caballero, C. del Cahizo, A. LuqueInstitute de Energia Solar. ETSI Telecomunicacion. Universidad Politecnica de Madrid. Spain

Modelo de SPICE para Modulo Fotovoltaico 301G. Nofuentes, G. Almonacid, F.J. Munoz, E. Guzman, J.C. Hernandez.Grupo Jaen de Tecnica Aplicada. Escuela Politecnica Superior (Universidad de Jaen). Jaen. Spain.

Fast Grown Thin-Film Nanocrystalline Silicon Solar Cellson Inexpensive Substrates by Hot-Wire CVD 305C. Voz', D. Soler2, M. Fonrodona2, J. Bertomeu2, J.M. Asensi2, J. Andreu2

'Universitat Politecnica de Catalunya, Departament d'Enginyeria Electronica. Barcelona, Spain2Universitat de Barcelona, Departament de Fisica Aplicada i Optica. Barcelona, Spain

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Annealed Amorphous Sio,8Co,2/Si Heteroj unction Solar Cells Development 309M. Vetter', I. Martin2, D. Bardes', L.F. Marsal2, A. Orpella1,J. Pallares2, J. Puigdollers', R. Alcubilla1

'Departament d'Enginyeria Electronica. Universitat Politecnica de Catalunya. Barcelona. Spain2Escola Tecnica Superior d'Enginyeria. Dept. d'Enginyeria Electronica. Universitat Rovira i Virgili. Tarragona. Spain

Cz Bifacial Solar Cells for Concentration 313I. Pou, C del Cahizo, A. LuqueInstituto de Energia Solar. ETSI Telecomunicacion. Universidad Politecnica de Madrid. Spain.

Sensitivity Enhancement of an Integrated Mach-ZehnderInterferometer Sensor Based on ARROW Structures 317F. Prieto1, A. Calle1, B. Sepulveda1, A. Llobera2, C. Dominguez2, L.M. Lechuga''Centre Nacional de Microelectronica (CNM-CSIC). IMM. Tres Cantos, Madrid (Spain)1 Centre Nacional de Microelectronica (CNM-CSIC). 1MB. Campus UAB. Bellaterra, Barcelona. (Spain)

Microfabricated Interdigital Structure (IDS) and Its Applicationfor Bacterial Growth Monitoring In Ice Cream Samples 321G. Montoya, A. Bratov, C. DominguezCentra Nacional de Microelectronica, Campus U.A.B., Bellaterra. Barcelona. Spain

Influence of the Catalyst on the Performance of Toxic Gas Microsensors 325G. Garcia-Mandayo, S.M. Olaizola, E. Castano, F.J. GraciaCentre de Estudios e Investigaciones Tecnicas de Gipuzkoa (CEIT). San Sebastian. Spain

Analysis of the Charge Loss Effects in SwitchCurrent Drive of Electrostatic Actuators 329R. Nadal-Guardia, J. Pons, L. Castaner, A. RodriguezSemiconductor Devices Group (GDS), E.T.S. d'Enginyeria de Telecomunicacio de Barcelona. Spain

Fabrication of Resonant Devices by Bulk Micromachiningand Si to Glass Bonding for Microbalances 333J. Amirola, A. Rodriguez, L. CastanerGrupo de Dispositivos Semiconductores (GDS). Universidad Politecnica de Cataluna.Dept. de Ingenieria Electronica. Barcelona Spain

A Micro-Hotplate for Gas Sensors Based on Anodic Bonding Silicon/Glass 337M.J. Lopez, J.A.Plaza, I.Grdcia, C.CaneCentra Nacional de Microelectronica, Campus UAB, Bellaterra (Barcelona). Spain.

FFT and Wavelet Analyses of Response Patterns from aTemperature-Modulated Micro-Hotplate Gas Sensor 341E. Llobet', J. Brezmes', X. Vilanova', R. Ionescu, S. Al-Khalifa2, J. W. Gardner2, X. Correig1.'Dept. of Electronic Engineering. Universitat Rovira i Virgili, Tarragona. Spain.2School of Engineering, University of Warwick, Coventry, U.K.

XIV

Advanced Technologies for SnO2 Based Gas Sensor Devices 345A. Cirera1, J. Arbiol1, J. Puigcorbe', I. Jimenez1, J. Cerdd1, A. Vila ,A. Cornet', J.R. Morante', I. Gracia2, C. Cane2.'Enginyeria i Materials Electronics, Departament d'Electronica, Universitat de Barcelona. Spain2Centro Nacional de Microelectronica.Campus Universitat Auntonoma de Barcelona. Bellaterra (barcelona). Spain

A Robust Gas Sensor Device for Harsh Environments Based on Pt-Modified TiO2 349A. Ruiz, J. Arbiol, J. Folch, A. Cabot, R. Diaz, A. Marsal, A. Cirera, A. Cornet, J. R. MoranteEnginyeria i Materials Electronics, E. M. E.Departament d'Electronica. Universitat de Barcelona. Spain.

Protection of ISFETs with SiO2/Si3N4 Gate Dielectric from Electrostatic Discharges 353A. Baldi, R. Mas, C. DominguezGrup de Transductors Quimics. Institut de Microelectronica de Barcelona-CNM, CSIC. Campus UAB, Bellaterra. Spain

An Electronic Nose to Control the Processing of Dry-Cured Iberian Hams 357M.C. Horrillo, R. Gomez-Espinosa, L. Otero, A. Blanco, M. Garcia, M. Alexandre, J. GutierrezInstitute de Fisica Aplicada, CSIC, Madrid. Spain

Response Comparison from a Multisensor forDifferent Varieties of Grape and Fermented Wines 361I. Sayago, M.C. Horrillo, M.J. Fernandez, L. Ares, L. Otero, J. GutierrezLaboratorio de Sensores, Instituto de Fisica Aplicada (CSIC), Madrid. Spain.

Electrical Characterization of Mesa EtchedAnnealed a-SiC/c-Si Heterojunction Diodes 365I. Martin', M. Vetter2, D. Bardes2, A. Orpella2, J. Puigdollers2,J. Pallares1, L.F. Marsal1, R. Alcubilla2

'Escola Tecnica Superior d'Enginyeria. Dept. d'Enginyeria Electronica. Universitat Rovira i Virgili. Tarragona. Spain2Departament d'Enginyeria Electronica. Universitat Politecnica de Catalunya. Barcelona. Spain

High Quality Ten-Period AlxGai.xN/GaN BraggReflectors Grown by Molecular Beam Epitaxy 369S. Fernandez1, F.B. Naranjo1, F. Calle1, E. Calleja'', A. Trampert2, K.H. Ploog2

'ISOM and Departamento de Ingenieria Electronica, ETSIT Telecomunicacion,Universidad Politecnica de Madrid. Spain.2Paul-Drude-Institut fuer Festkoerperelektronik, Berlin. Germany.

Progress on Thin-Film Transistors Deposited byHot Wire Chemical Vapour Deposition 373D.K. Dosev'3, A. Orpella', C. Voz , M. Fonrodona2, D. Soler', J. Pallares3, L.F. Marsal3,J. Bertomeu2, J. Puigdollers', J. Andreu2, R. Alcubilla'' Departament d'Enginyeria Electronica, Universitat Politecnica de Catalunya. Barcelona. Spain2 Departament de Fisica Aplicada i Optica. Universitat de Barcelona. Spain3 Departament d'Enginyeria Electrica, Electronica i Automatica. Universitat Rovira i Virgili, Tarragona. Spain

A Multiple FGR Edge Termination Structure for High Voltage IGBTs 377M. Vellvehi', D. Flores1, S. Hidalgo', J. Rebollo1, J. Milldn',L. Coulbeck2, P. Waind2, D. Newcombe2

1 Institut de Microelectronica de Barcelona (CNM-CSIC), Campus U.A.B. Bellaterra (Barcelona). Spain2 Dynex Semiconductors, Doddington Road, U.K.

XV

Algorithm for Statistical Noise Reduction inThree-Dimensional Ion Implant Simulations 381J.M. Herndndez-Mangas, J. Arias, M. Jaraiz, L. Bailon, J. BarbollaDept. Electricidad y Electronica, Universidad de Valladolid. Spain

Atomistic Modeling of Amorphization and Dopant Diffusion in Silicon 385L.A. Marques', L. Pelaz1, G.H. Gilmer2, L. Bailon , J. Barbolla''Dept. Electricidad y Electronica, Universidad de Valladolid, 47011 Valladolid, Spain.2Bell Laboratories, Lucent Technologies, Murray Hill, NJ-07974.

Strained-Si on Si,.xGex MOSFET Inversion Layer Centroid Modelling 389J.B. Rolddn, F. Gdmiz, J.A. Lopez-Villanueva, P. Cartujo, A. GodoyDepartamento de Electronica y Tecnologia de Computadores. Universidad de Granada. Spain

Determiantion of Parameters of Deep Levels by Generation-RecombinationNoise in P-N Junctions 393J.A. Jimenez Tejada, A. Palma, A. Godoy, P. CartujoDepartamento de Electronica y Tecnologia de Computadores. Universidad de Granada. Spain

Importance of the Split-Off in the Hole Subbands of a Silicon Inversion Layer 397S. Rodriguez, J. Banqueri, F. Jimenez-Molinos, P. Cartujo-Cassinello, J.E. CarcellerDepartamento de Electronica y Tecnologia de Computadores. Universidad de Granada. Spain

Transistor Model Parameter Determination withnon-Conventional Optimisation Algorithms 401T. Zimmer, B. Ardouin, F. Franze, D. Berger, P. FouillatLaboratoire de Microelectronique IXL, University of Bordeaux I. France*STMicroelectronics, Crolles, France

Design of High Tuning Sensitivity VCO's: A Case Study 405M.I. Dieste1, J. Vicente2

1 Department of Electromechanical Engineering. University of Burgos. Spain2Department of Electronics. University of Valladolid. Spain

Test Results for Some Operational Amplifiers Subjected to Neutron Radiation 409F.J. Franco, J.P. Santos, J. Lozano, A.H. Cachero, M.A. Martin, A. Paz, J.A. AgapitoUniversidad Complutense (UCM), Electronics Dept., Madrid. Spain