j.p. balbuena, g. pellegrini, r. bates, c. fleta, m. lozano, m. ullán

6th Trento Workshop on Advanced Silicon Radiation Detectors 1/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

J.P. Balbuena, G. Pellegrini, R. Bates, C. Fleta, M. Lozano, M. Ullán

Semiconductor radiation detectors groupInstitut de Microelectrònica de Barcelona

Centre Nacional de Microelectrònica - CSICSpain

3rd March 2011

Simulations of 3D-DDTCSilicon detectors

Simulations of 3D-DDTCSilicon detectors

6th Trento Workshop on Advanced Silicon Radiation Detectors 2/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Blocks Columns Increments Transitions Hypertext

11 Motivation

22 Simulation: Layout and parameters

33 Simulation: Electric field

44 Simulation: Charge multiplication

55 Conclusions/Future work

6th Trento Workshop on Advanced Silicon Radiation Detectors 3/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Blocks Columns Increments Transitions Hypertext

11 Motivation

22 Simulation: Layout and parameters

33 Simulation: Electric field

44 Simulation: Charge multiplication

55 Conclusions/Future work

6th Trento Workshop on Advanced Silicon Radiation Detectors 4/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

3D-DDTC measurementsIrradiated 3D detectors present Charge multiplication effect:

ObjectiveDevelop 3D detectors with Charge multiplication effect for low Bias voltages before irradiation by changing the bulk doping concentration.

above 150V for p-type above 260V for n-type

[M. Köhler, University of Freiburg, Germany]

6th Trento Workshop on Advanced Silicon Radiation Detectors 5/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Blocks Columns Increments Transitions Hypertext

11 Motivation

22 Simulation: Layout and parameters

33 Simulation: Electric field

44 Simulation: Charge multiplication

55 Conclusions/Future work

6th Trento Workshop on Advanced Silicon Radiation Detectors 6/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Geometry- pitch: 80 µm- wafer thickness: 285 µm- column depth: 250 µm- column diameter: 10 µm

Doping levels- n+ columns: 1019 cm-3

- p+ columns: 1019 cm-3

- p-stop: 1018 cm-3

- Si/SiO2 charge: 5·1011 cm-2

P-type

p+ p+

p+ p+

n+

6th Trento Workshop on Advanced Silicon Radiation Detectors 7/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Geometry- pitch: 80 µm- wafer thickness: 285 µm- column depth: 250 µm- column diameter: 10 µm

Doping levels- n+ columns: 1019 cm-3

- p+ columns: 1019 cm-3

- Si/SiO2 charge: 5·1011 cm-2

N-type

n+ n+

n+ n+

p+

6th Trento Workshop on Advanced Silicon Radiation Detectors 8/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Physics ModelMobility Doping dependance, High Electric field

saturation

Generation and Recombination Doping dependant Shockley-Read-Hall Generation recombination, Surface recombination model

Impact ionization University of Bologna impact ionization model

Tunneling Band-to-band tunneling, Hurkx trap-assisted tunneling

Oxide physics Oxide as a wide band gap semiconductor for mips (irradiated), interface charge accumulation

Radiation model Acceptor/Donor states in the band gap (traps)

[M. Benoit, Laboratoire de l’accélérateur linéar (LAL), Orsay, France]

6th Trento Workshop on Advanced Silicon Radiation Detectors 9/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Blocks Columns Increments Transitions Hypertext

11 Motivation

22 Simulation: Layout and parameters

33 Simulation: Electric field

44 Simulation: Charge multiplication

55 Conclusions/Future work

6th Trento Workshop on Advanced Silicon Radiation Detectors 10/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Electric Field (p-type)

0 10 20 30 40 50 600

2

4

6

8

10

12

14

16

18

Ele

ctric

Fie

ld (

V/µ

m)

Distance (µm)

1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm

Cut at z = 142,5 µm for Vbias

= 150 V

n+

p+

0 50 100 150 200 250 30002468

101214161820222426

Ele

ctric

Fie

ld (

V/µ

m)

Reverse Bias (V)

1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm

Cut at z = 35 µm

0 50 100 150 200 250 30002468

101214161820222426

Ele

ctric

Fie

ld (

V/µ

m)

Reverse Bias (V)

1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm

Cut at z = 142,5 µm

0 50 100 150 200 250 3000

5

10

15

20

25

30

35

Ele

ctric

Fie

ld (

V/µ

m)

Reverse Bias (V)

1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm

Cut at z = 250 µm

6th Trento Workshop on Advanced Silicon Radiation Detectors 11/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Electric Field (n-type)

0 10 20 30 40 50 600

2

4

6

8

10

12

14

16

1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm

Ele

ctric

Fie

ld (

V/µ

m)

Distance (µm)

Cut at z = 142,5 µm for Vbias

= 150 V

n+

p+

0 50 100 150 200 250 30002468

101214161820222426

Ele

ctric

Fie

ld (

V/µ

m)

Reverse Bias (V)

1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm

Cut at z = 35 µm

0 50 100 150 200 250 30002468

101214161820222426

Ele

ctric

Fie

ld (

V/µ

m)

Reverse Bias (V)

1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm

Cut at z = 142,5 µm

0 50 100 150 200 250 30002468

10121416182022242628303234363840

Ele

ctric

Fie

ld (

V/µ

m)

Reverse Bias (V)

1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm

Cut at z = 250 µm

6th Trento Workshop on Advanced Silicon Radiation Detectors 12/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Using PowerPointto Typeset Nice Presentations

Blocks Columns Increments Transitions Hypertext

11 Motivation

22 Simulation: Layout and parameters

33 Simulation: Electric field

44 Simulation: Charge multiplication

55 Conclusions/Future work

6th Trento Workshop on Advanced Silicon Radiation Detectors 13/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

0 200 400 600 800 10000

100

200

300

Vol

tage

(V

)

Resistivity (·cm)

VFD

p-type

V (Emax

~ 14 V/µm) p-type

VFD

n-type

V (Emax

~ 14 V/µm) n-type

Charge multiplication

Compromise between low full depletion voltages and high enough voltages for Charge multiplication

0 100 200 300 400 500 600

16000

20000

24000

28000

32000

36000

40000

Cha

rge

Col

lect

ed (

elec

tron

s)

Resistivity (·cm)

p-type (Vbias

=200V)

n-type (Vbias

=100V)

V = 150 V for both n and p-type

ρn = 100 Ω·cm ρp = 200 Ω·cm

MIP 22800 electrons

Charge multiplication

6th Trento Workshop on Advanced Silicon Radiation Detectors 14/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Charge multiplication in the irradiated 3D model

Doping concentration: Neff = 7·1011 cm-3 (p-type)

Fluence: Φeq = 2·1015 neq/cm2

0 10 20 30 40 50 600

2

4

6

8

10

12

14

Vbias

= 200 V

Vbias

= 250 V

Ele

ctric

fie

ld (

V/µ

m)

Distance (µm)

0 100 200 300

16000

18000

20000

22000

24000

26000

28000

30000

Cha

rge

Col

lect

ed (

elec

tron

s)

Bias voltage (V)

eq

= 2 x 1015 n/cm2

Electric field compatible with Charge multiplication for 250V

Unexpected reduction of the charge collected for 250V !!

0 50 100 150 200 250 3004x10-10

5x10-10

6x10-10

7x10-10

8x10-10

9x10-10

10-9

Leak

age

curr

ent

(A)

Bias voltage (V)

Qox

= 5·1011 cm-2

Qox

= 1012 cm-2

Qox

= 2·1012 cm-2

Qox

= 3·1012 cm-2

Interface charge: Qox = 5·1011 cm-2

6th Trento Workshop on Advanced Silicon Radiation Detectors 15/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Using PowerPointto Typeset Nice Presentations

Blocks Columns Increments Transitions Hypertext

11 Motivation

22 Simulation: Layout and parameters

33 Simulation: Electric field

44 Simulation: Charge multiplication

55 Conclusions/Future work

6th Trento Workshop on Advanced Silicon Radiation Detectors 16/16

J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)

Conclusions

Future work

Obtained charge multiplication effect in both n and p-type substrates without irradiation

Complete the study on multiplication effect for different doping levels at different biasing voltages

Solve problems of charge multiplication in the irradiated 3D model.