actividades de i+d en igfae/usc
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Actividades de I+D en IGFAE/USC . Pablo Vázquez (IGFAE-USC). IV JORNADAS SOBRE LA PARTICIPACIÓN ESPAÑOLA EN FUTUROS ACELERADORES LINEALES Madrid, 2-3 Diciembre 2009. R&D activities at Santiago. R&D in pixel detectors R&D in microstrips silicon detectors DEPFET project - PowerPoint PPT PresentationTRANSCRIPT
Actividades de I+D en IGFAE/USC
Pablo Vázquez (IGFAE-USC)
IV JORNADAS SOBRE LA PARTICIPACIÓN ESPAÑOLA EN FUTUROS ACELERADORES LINEALESMadrid, 2-3 Diciembre 2009
P. Vázquez 2IV jornadas FLC, Madrid, 2-3 Dec 2009
R&D activities at Santiago R&D in pixel detectors R&D in microstrips silicon detectors DEPFET project
Belle II PXD PS system Sensor characterization (Lab, testbeams) Gamma irradiation (Co-60)
FTD simulations
Personnel dedicated: 5 FTE Pablo Vázquez, Abraham Gallas, Daniel Esperante,
Jevgenij Visniakov, Eliseo Pérez, Javier Caride
P. Vázquez 3IV jornadas FLC, Madrid, 2-3 Dec 2009
R&D in pixel detectors CERN + LHCb + Timepix/Medipix collaboration
2 test beams summer 2009 at CERN Telescope (6) + DUT made with Timepix 55 um pixel size 300 um thickness Hit resolution ~5 um Track resolution ~2.6 um
P. Vázquez 4IV jornadas FLC, Madrid, 2-3 Dec 2009
R&D in pixel detectors Timepix/Medipix collaboration is working in
adapting the Timepix ASIC for HEP experiments Since we have obtained very good results in
testbeamsa) The LHCb VELO upgrade group has decided to
choose the timepix as baseline pixel solutionb) LHCb + Timepix/Medipix has decided to build an
upgraded version of the Timepix telescope
P. Vázquez
R&D in pixel detectors
a) USC in collaboration with the CNM, Glasgow and CERN are building thinned pixel detectors 2D sensors thinned up to 200, 150 and 100 um To be readout with the Timepix and characterized as
function of the thickness Charge sharing Efficiency Time of arrival measurements
Sensors are being produced now Bumpbonding tryout also in the CNM Possible design variations under discussion
Elongated pixels at 1st row, edgless, gard rings
5IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez 6IV jornadas FLC, Madrid, 2-3 Dec 2009
R&D in pixel and microstrips silicon sensors
b) Telescope based on Timepix with following characteristics Active area: 2.8x2.8 cm2 Resolucion: 2 um, 1 ns Readout rate: 75 kHz
To be used in R&D in detectors for ILC or LHC upgrades with the contribution of the USC Timing Unit, integration of the DUT daq in the DAQ of the
telescope Mechanics of the DUT Cold box to work with irradiated sensors in the test beam
P. Vázquez
R&D in microstrips silicon detectors In case the pixel option cannot meet the physics and
time scale requirements, the silicon strip option should hold for LHCb VELO upgrade
The strip option should stay as close as possible to the current design improving its performance 40 MHz readout Higher granularity (x10 luminosity increase) Impact Parameter resolution Radiation hardness
USC wants to participate in the design and characterization of the new sensors, in the module assembly and tests with particle beams at CERN
Very useful for the FTD conception of ILC
IV jornadas FLC, Madrid, 2-3 Dec 2009 7
P. Vázquez
R&D in microstrips silicon detectors 1 module assembled in Santiago to be tested in the lab
and in testbeam IT hybrid (3 beetles) + 2 pitch adapters + PR01
Hamamatsu sensor
IV jornadas FLC, Madrid, 2-3 Dec 2009 8
P. Vázquez 9IV jornadas FLC, Madrid, 2-3 Dec 2009
DEPFET: Belle II PXD PS system
50cm 2m
44 half-modules 17 voltages per
half-module Regulation cards
on radiation and B-field enviroment
22 x half-module
P. Vázquez 10IV jornadas FLC, Madrid, 2-3 Dec 2009
DEPFET: Belle II PXD PS system
Regul.DHH
PXD
PS
Regul.DHH
PSElectronics
hutNo radiation
~krad + H field
Belle layout
750 voltages1500 lines
> 500W
P. Vázquez 11IV jornadas FLC, Madrid, 2-3 Dec 2009
DEPFET: sensor characterization Lab test
Gain (radioactive source), charge collection (laser) Dependence with radiation
241Am source on aPXD5 matrix
P. Vázquez 12IV jornadas FLC, Madrid, 2-3 Dec 2009
DEPFET: sensor characterization Testbeams
TB09 data taking and analysis Future testbeams
Irradiated module Power supply prototype
P. Vázquez 13IV jornadas FLC, Madrid, 2-3 Dec 2009
DEPFET: 2009 test beam analysis
Eutelescope framework installed, some procesors working
P. Vázquez
Gamma irradiation Failed depfet PXD5 module irradiation this summer
Module dead before irradiation
PXD5 matrices being tested in Karlsruhe and Santiago Dec 09 up to 10Mrad
PXD6 matrices will be irradiated next year14IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
ASIC development In collaboration with Grupo de Vision Artificial at
USC a project was submitted to Xunta de Galicia to produce in Tezzaron, using TSVs, a 3D pixel readout chip demonstrator for HEP applications CMOS 3D 130nm technology 64x64 pixels of 40x40 um pixel size 4 layers
Sensor: pn diode Signal conditioning: amplification, test pulse,
comparator Signal processing: time stamping, counter, time over
threshold, 8bit memory Readout
Possible incorporation to R&D for FLC project in 2013
15IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez 16IV jornadas FLC, Madrid, 2-3 Dec 2009
Summary on R&D activities in the USC R&D in pixel detectors R&D in microstrips silicon detectors DEPFET project
Belle II PXD PS system Sensor characterization (Lab, testbeams) Gamma irradiation (Co-60)
FTD simulations