-
A-3.24.2 ELECTRONICA II Amplificadores de Potencia
Facultad de Ciencias Exactas, Ingeniera y Agrimensura - UNR Ingeniera Electrnica
Compendio de Hojas de Datos:
Transistores de potencia Para uso interno de la materia Electrnica II
Indice: 2SC4793 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) MJE170/171/172 (PNP), MJE180/181/182 (NPN) TIP31 A/B/C (NPN), TIP32 A/B/C (PNP) 2N5190/191/192 2SD1135 BD675/A, 677/A, 679/A, 681 2SC3074 TIP120/21/22 (NPN), TIP125/26/27 (PNP) BD243B/C, 244B/C MJE2955T (PNP), MJE3055T (NPN) 2N3442 2N3715/16 2N5875/76 (PNP), 2N5877/78 (NPN) 2SC5199 2N5879/80 (PNP), 2N5881/82 (NPN) 2N3055A, MJ15015 (NPN), MJ15016 (PNP) MJL3281A (NPN), MJL1302A (PNP)
-
2SC4793
2004-07-26 1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 230 V
Collector-emitter voltage VCEO 230 V
Emitter-base voltage VEBO 5 V
Collector current IC 1 A
Base current IB 0.1 A
Ta = 25C 2.0 Collector power dissipation Tc = 25C
PC 20
W
Junction temperature Tj 150 C
Storage temperature range Tstg 55 to 150 C
Electrical Characteristics (Tc = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 230 V, IE = 0 1.0 A
Emitter cut-off current IEBO VEB = 5 V, IC = 0 1.0 A
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 230 V
DC current gain hFE VCE = 5 V, IC = 100 mA 100 320
Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA 1.5 V
Base-emitter voltage VBE VCE = 5 V, IC = 500 mA 1.0 V
Transition frequency fT VCE = 10 V, IC = 100 mA 100 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 20 pF
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA 2-10R1A
Weight: 1.7 g (typ.)
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
C4793
Part No. (or abbreviation code)
-
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 81 Publication Order Number:
TIP29B/D
TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)
Complementary SiliconPlastic Power Transistors
Designed for use in general purpose amplifier and switchingapplications. Compact TO220 AB package.
Features
PbFree Packages are Available*
*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.
TO220ABCASE 221A
STYLE 1
MARKINGDIAGRAM
1 AMPEREPOWER TRANSISTORS
COMPLEMENTARY SILICON40, 60, 80, 100 VOLTS,
80 WATTS
http://onsemi.com
12
3
4
TIPxxx = Device Code:29, 29A, 29B, 29C30, 30A, 30B, 30C
A = Assembly LocationY = YearWW = Work WeekG = PbFree Package
TIPxxxGAYWW
See detailed ordering and shipping information in the packagedimensions section on page 2 of this data sheet.
ORDERING INFORMATION
-
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
http://onsemi.com2
MAXIMUM RATINGSRating
Symbol
TIP29TIP30
TIP29ATIP30A
TIP29BTIP30B
TIP29CTIP30CUnit
Collector Emitter VoltageVCEO
40
60
80
100
Vdc
Collector Base Voltage
VCB
40
60
80
100
Vdc
Emitter Base Voltage
VEB
5.0
Vdc
Collector Current Continuous Peak
IC
1.03.0
Adc
Base Current
IB
0.4
Adc
Total Power Dissipation@ TC = 25CDerate above 25C
PD
300.24
WW/C
Total Power Dissipation@ TA = 25CDerate above 25C
PD
2.00.016
WW/C
Unclamped Inductive Load Energy (Note 1)
E
32
mJ
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
RJA
62.5
C/W
Thermal Resistance, JunctiontoCase
RJC
4.167
C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limitvalues (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,damage may occur and reliability may be affected.1. This rating based on testing with LC = 20 mH, RBE = 100 , VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz
ORDERING INFORMATION
Device Package Shipping
TIP29 TO220 50 Units / Rail
TIP29G TO220(PbFree)
50 Units / Rail
TIP29A TO220 50 Units / Rail
TIP29AG TO220(PbFree)
50 Units / Rail
TIP29B TO220 50 Units / Rail
TIP29BG TO220(PbFree)
50 Units / Rail
TIP29C TO220 50 Units / Rail
TIP29CG TO220(PbFree)
50 Units / Rail
TIP30 TO220 50 Units / Rail
TIP30G TO220(PbFree)
50 Units / Rail
TIP30A TO220 50 Units / Rail
TIP30AG TO220(PbFree)
50 Units / Rail
TIP30B TO220 50 Units / Rail
TIP30BG TO220(PbFree)
50 Units / Rail
TIP30C TO220 50 Units / Rail
TIP30CG TO220(PbFree)
50 Units / Rail
-
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
http://onsemi.com3
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2)TIP29, TIP30
TIP29A, TIP30ATIP29B, TIP30BTIP29C, TIP30C
VCEO(sus)
406080
100
Vdc
Collector Cutoff Current(VCE = 30 Vdc, IB = 0) TIP29, TIP29A, TIP30, TIP30A(VCE = 60 Vdc, IB = 0) TIP29B, TIP29C, TIP30B, TIP30C
ICEO
0.30.3
mAdc
Collector Cutoff Current(VCE = 40 Vdc, VEB = 0) TIP29, TIP30(VCE = 60 Vdc, VEB = 0) TIP29A, TIP30A(VCE = 80 Vdc, VEB = 0) TIP29B, TIP30B(VCE = 100 Vdc, VEB = 0) TIP29C, TIP30C
ICES
200200200200
Adc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
hFE
4015
75
CollectorEmitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)
VCE(sat)
0.7
Vdc
BaseEmitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.3
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (Note 3)(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
MHz
SmallSignal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%3. fT = hfe ftest
-
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 91 Publication Order Number:
MJE171/D
MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)
Preferred Device
Complementary PlasticSilicon Power Transistors
The MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.
Features
CollectorEmitter Sustaining Voltage VCEO(sus) = 40 Vdc MJE170, MJE180
= 60 Vdc MJE171, MJE181= 80 Vdc MJE172, MJE182
DC Current Gain hFE = 30 (Min) @ IC = 0.5 Adc
= 12 (Min) @ IC = 1.5 Adc CurrentGain Bandwidth Product
fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages
ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V0 @ 0.125 in ESD Ratings: Machine Model, C
Human Body Model, 3B PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorBase VoltageMJE170, MJE180MJE171, MJE181MJE172, MJE182
VCB
6080
100
Vdc
CollectorEmitter VoltageMJE170, MJE180MJE171, MJE181MJE172, MJE182
VCEO
406080
Vdc
EmitterBase Voltage
VEB
7.0
Vdc
Collector Current Continuous Peak
IC
3.06.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25CDerate above 25C
PD
1.50.012
WW/C
Total Power Dissipation @ TA = 25CDerate above 25C
PD
12.50.1
WW/C
Operating and Storage JunctionTemperature Range
TJ, Tstg
65 to +150
C
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normaloperating conditions) and are not valid simultaneously. If these limits are exceeded,device functional operation is not implied, damage may occur and reliability may beaffected.
*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.
TO225AACASE 7709
STYLE 1
3 AMPERESPOWER TRANSISTORS
COMPLEMENTARY SILICON40 60 80 VOLTS
12.5 WATTS
3 2 1
Preferred devices are recommended choices for future useand best overall value.
See detailed ordering and shipping information in the packagedimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
YWWJE1xxG
Y = YearWW = Work WeekJE1xx = Specific Device Code
x = 70, 71, 72, 80, 81, or 82G = PbFree Package
-
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
http://onsemi.com2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase JC 10 C/W
Thermal Resistance, JunctiontoAmbient JA 83.4 C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage MJE170, MJE180(IC = 10 mAdc, IB = 0) MJE171, MJE181
MJE172, MJE182
VCEO(sus)
406080
Vdc
Collector Cutoff Current(VCB = 60 Vdc, IE = 0) MJE170, MJE180(VCB = 80 Vdc, IE = 0) MJE171, MJE181(VCB = 100 Vdc, IE = 0) MJE172, MJE182(VCB = 60 Vdc, IE = 0, TC = 150C) MJE170, MJE180(VCB = 80 Vdc, IE = 0, TC = 150C) MJE171, MJE181(VCB = 100 Vdc, IE = 0, TC = 150C) MJE172, MJE182
ICBO
0.10.10.1
0.10.1
Adc
mAdc
Emitter Cutoff Current(VBE = 7.0 Vdc, IC = 0)
IEBO
0.1
Adc
ON CHARACTERISTICS
DC Current Gain(IC = 100 mAdc, VCE = 1.0 Vdc)(IC = 500 mAdc, VCE = 1.0 Vdc)(IC = 1.5 Adc, VCE = 1.0 Vdc)
hFE
503012
250
CollectorEmitter Saturation Voltage(IC = 500 mAdc, IB = 50 mAdc)(IC = 1.5 Adc, IB = 150 mAdc)(IC = 3.0 Adc, IB = 600 mAdc)
VCE(sat)
0.30.91.7
Vdc
BaseEmitter Saturation Voltage(IC = 1.5 Adc, IB = 150 mAdc)(IC = 3.0 Adc, IB = 600 mAdc)
VBE(sat)
1.52.0
Vdc
BaseEmitter On Voltage(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.2
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (Note 1)(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
50
MHz
Output Capacitance(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJE171/MJE172
MJE181/MJE182
Cob
6040
pF
1. fT = hfe ftest.
-
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 101 Publication Order Number:
TIP31A/D
TIP31, TIP31A, TIP31B, TIP31C,(NPN), TIP32, TIP32A, TIP32B,TIP32C, (PNP)
Complementary SiliconPlastic Power Transistors
Designed for use in general purpose amplifier and switchingapplications.
Features CollectorEmitter Saturation Voltage
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc CollectorEmitter Sustaining Voltage
VCEO(sus) = 40 Vdc (Min) TIP31, TIP32= 60 Vdc (Min) TIP31A, TIP32A= 80 Vdc (Min) TIP31B, TIP32B= 100 Vdc (Min) TIP31C, TIP32C
High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO220 AB Package PbFree Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector Emitter Voltage TIP31, TIP32TIP31A, TIP32ATIP31B, TIP32BTIP31C, TIP32C
VCEO
406080
100
Vdc
CollectorBase Voltage TIP31, TIP32TIP31A, TIP32ATIP31B, TIP32BTIP31C, TIP32C
VCB
406080
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current ContinuousPeak
IC
3.05.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation@ TC = 25CDerate above 25C
PD
400.32
WW/C
Total Power Dissipation@ TA = 25CDerate above 25C
PD
2.00.016
WW/C
Unclamped Inductive Load Energy (Note 1)
E
32
mJ
Operating and Storage JunctionTemperature Range
TJ, Tstg
65 to+150
C
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100
*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.
TO220ABCASE 221A
STYLE 1
MARKINGDIAGRAM
3 AMPEREPOWER TRANSISTORS
COMPLEMENTARY SILICON406080100 VOLTS,
40 WATTS
http://onsemi.com
12
3
4
TIP3xx = Device Codexx = 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,A = Assembly LocationY = YearWW = Work WeekG PbFree Package
TIP3xxGAYWW
See detailed ordering and shipping information in the packagedimensions section on page 2 of this data sheet.
ORDERING INFORMATION
-
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
http://onsemi.com2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
RJA
62.5
C/W
Thermal Resistance, JunctiontoCase
RJC
3.125
C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2) TIP31, TIP32(IC = 30 mAdc, IB = 0) TIP31A, TIP32A
TIP31B, TIP32BTIP31C, TIP32C
VCEO(sus)
406080
100
Vdc
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A, TIP32A
ICEO
0.3
mAdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C, TIP32B, TIP32C
0.3
Collector Cutoff Current(VCE = 40 Vdc, VEB = 0) TIP31, TIP32(VCE = 60 Vdc, VEB = 0) TIP31A, TIP32A(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C
ICES
200200200200
Adc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
2510
50
CollectorEmitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)
VCE(sat)
1.2
Vdc
BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.8
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 MHzSmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping
TIP31 TO220 50 Units / Rail
TIP31G TO220(PbFree)
50 Units / Rail
TIP31A TO220 50 Units / Rail
TIP31AG TO220(PbFree)
50 Units / Rail
TIP31B TO220 50 Units / Rail
TIP31BG TO220(PbFree)
50 Units / Rail
TIP31C TO220 50 Units / Rail
TIP31CG TO220(PbFree)
50 Units / Rail
TIP32 TO220 50 Units / Rail
TIP32G TO220(PbFree)
50 Units / Rail
TIP32A TO220 50 Units / Rail
TIP32AG TO220(PbFree)
50 Units / Rail
TIP32B TO220 50 Units / Rail
TIP32BG TO220(PbFree)
50 Units / Rail
TIP32C TO220 50 Units / Rail
TIP32CG TO220(PbFree)
50 Units / Rail
-
Semiconductor Components Industries, LLC, 2006March, 2006 Rev. 12
1 Publication Order Number:2N5191/D
2N5190, 2N5191, 2N5192
Silicon NPN PowerTransistors
Silicon NPN power transistors are for use in power amplifier andswitching circuits, excellent safe area limits. Complement to PNP2N5194, 2N5195.
Features
ESD Ratings: Machine Model, C; > 400 VHuman Body Model, 3B; > 8000 V
Epoxy Meets UL 94 V0 @ 0.125 in. PbFree Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage 2N51902N51912N5192
VCEO 406080
Vdc
CollectorBase Voltage 2N51902N51912N5192
VCBO 406080
Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current IC 4.0 Adc
Base Current IB 1.0 Adc
Total Device Dissipation @ TC = 25CDerate above 25C
PD 40320
WmW/C
Operating and Storage JunctionTemperature Range
TJ, Tstg 65 to +150 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase RJC 3.12 C/W
Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.
http://onsemi.com
Device Package Shipping
2N5190 TO225AA 500 Units/Box
4.0 AMPERESNPN SILICON
POWER TRANSISTORS40, 60, 80 VOLTS 40 WATTS
Y = YearWW = Work Week2N519x = Device Code
x = 0, 1, or 2G = PbFree Package
2N5191G TO225AA(PbFree)
500 Units/Box
2N5192 TO225AA 500 Units/Box
TO225AACASE 77STYLE 1
MARKING DIAGRAM
YWW2N519xG
3 2 1
2N5191 TO225AA 500 Units/Box
ORDERING INFORMATION
For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.
2N5192G TO225AA(PbFree)
500 Units/Box
2N5190G TO225AA(PbFree)
500 Units/Box
-
2N5190, 2N5191, 2N5192
http://onsemi.com2
ELECTRICAL CHARACTERISTICS* (TC = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1)(IC = 0.1 Adc, IB = 0) 2N5190
2N51912N5192
VCEO(sus)406080
Vdc
Collector Cutoff Current(VCE = 40 Vdc, IB = 0) 2N5190(VCE = 60 Vdc, IB = 0) 2N5191(VCE = 80 Vdc, IB = 0) 2N5192
ICEO
1.01.01.0
mAdc
Collector Cutoff Current(VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N5190(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N5191(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5192(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125C) 2N5190(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125C) 2N5191(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125C) 2N5192
ICEX
0.10.10.12.02.02.0
mAdc
Collector Cutoff Current(VCB = 40 Vdc, IE = 0) 2N5190(VCB = 60 Vdc, IE = 0) 2N5191(VCB = 80 Vdc, IE = 0) 2N5192
ICBO
0.10.10.1
mAdc
Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)
IEBO 1.0 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain(IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5190/2N5191
2N5192(IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5190/2N5191
2N5192
hFE2520107.0
10080
CollectorEmitter Saturation Voltage(IC = 1.5 Adc, IB = 0.15 Adc)(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
0.61.4
Vdc
BaseEmitter On Voltage(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on) 1.2 Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT 2.0 MHz
*JEDEC Registered Data.1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
-
2SD1135
Silicon NPN Triple Diffused
ADE-208-906 (Z)1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SB859
Outline
1. Base2. Collector (Flange)3. Emitter
TO-220AB
12 3
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 80 V
Emitter to base voltage VEBO 5 V
Collector current IC 4 A
Collector peak current IC(peak) 8 A
Collector power dissipation PC*1 40 W
Junction temperature Tj 150 C
Storage temperature Tstg 45 to +150 C
Note: 1. Value at TC = 25C.
-
2SD1135
2
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdownvoltage
V(BR)CEO 80 V IC = 50 mA, RBE =
Emitter to base breakdownvoltage
V(BR)EBO 5 V IE = 10 A, IC = 0
Collector cutoff current ICBO 0.1 mA VCB = 80 V, IE = 0
DC current transfer ratio hFE1*1 60 200 VCE = 5 V, IC = 1 A*
2
hFE2 35 VCE = 5 V, IC = 0.1 A*2
Base to emitter voltage VBE 1.5 V VCE = 5 V, IC = 1 A*2
Collector to emitter saturationvoltage
VCE(sat) 2 V IC = 2 A, IB = 0.2 A*2
Gain bandwidth product fT 10 MHz VCE = 5 V, IC = 0.5 A*2
Collector output capacitance Cob 40 pF VCB = 20 V, IE = 0, f = 1 MHz
Notes: 1. The 2SD1135 is grouped by hFE1 as follows.2. Pulse test.
B C
60 to 120 100 to 200
0 50 100 150Case temperature TC (C)
Col
lect
or p
ower
dis
sipa
tion
Pc
(W
)
Maximum Collector Dissipation Curve
20
40
60
0.05
0.1
0.2
0.5
1.0
2
5
Collector to emitter voltage VCE (V)
Col
lect
or c
urre
nt I
C (
A)
1 2 5 10 20 50 100
Area of Safe Operation
IC max (Continuous)(10 V, 4 A)
(33 V, 1.2 A)
(80 V, 0.06 A)
DC Operation
(TC = 25C)
-
1Motorola Bipolar Power Transistor Device Data
! "# ! . . . for use as output devices in complementary generalpurpose amplifier applica-tions.
High DC Current Gain hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A,
678, 678A, 680, 680A, 682 BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
MAXIMUM RATINGS
Rating
Symbol
BD675BD675A
BD677BD677A
BD679BD679A
BD681
Unit
CollectorEmitter Voltage
VCEO
45
60
80
100
Vdc
CollectorBase Voltage
VCB
45
60
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
0.1
Adc
Total Device Dissipation@TC = 25CDerate above 25C
PD
400.32
WattsW/C
Operating and Storage JunctionTemperating Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
3.13
C/W
50
40
10
5.0
015 30 45 60 75 105 135 150 165
Figure 1. Power Temperature Derating
TC, CASE TEMPERATURE (C)
P D, P
OW
ER D
ISSI
PATI
ON
(WAT
TS)
12090
45
20
15
30
25
35
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this documentby BD675/D
Motorola, Inc. 1995
4.0 AMPEREDARLINGTON
POWER TRANSISTORSNPN SILICON
60, 80, 100 VOLTS40 WATTS
*Motorola Preferred Device
CASE 7708TO225AA TYPE
REV 7
-
2 Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1) BD675, 675A(IC = 50 mAdc, IB = 0) BD677, 677A
BD679, 679ABD681
BVCEO
456080100
Vdc
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ICEO
500
Adc
Collector Cutoff Current(VCB = Rated BVCEO, IE = 0)(VCB = Rated BVCEO, IE = 0, TC = 100C)
ICBO
0.22.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS
DC Currert Gain(1)
(IC = 1.5 Adc,VCE = 3.0 Vdc) BD675, 677, 679, 681(IC = 2.0 Adc, VCE = 3.0 Vdc) BD675A, 677A, 679A
hFE
750750
CollectorEmitter Saturation Voltage(1)
(IC = 1.5 Adc, IB = 30 mAdc) BD677, 679, 681(IC = 2.0 Adc, IB = 40 mAdc) BD675A, 677A, 679A
VCE(sat)
2.52.8
Vdc
BaseEmitter On Voltage(1)
(IC = 1.5 Adc, VCE = 3.0 Vdc) BD677, 679, 681(IC = 2.0 Adc, VCE = 3 0 Vdc) BD675A, 677A, 679A
VBE(on)
2.52.5
Vdc
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
hfe
1.0
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Figure 2. DC Safe Operating Area
5.0
1.0
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
2.0
1.0
0.5
0.052.0 5.0 10 50 100
BONDING WIRE LIMITTHERMALLY LIMIT at TC = 25CSECONDARY BREAKDOWN LIMIT
0.2
0.1I C, C
OLL
ECTO
R C
UR
REN
T (A
MP)
TC = 25CBD675, 675ABD677, 677ABD679, 679A
BD681
20
There are two limitations on the power handling ability of atransistor average junction temperature and secondarybreakdown. Safe operating area curves indicate IC VCE lim-its of the transistor that must be observed for reliable opera-tion; e.g., the transistor must not be subjected to greaterdissipation than the curves indicate.
At high case temperatures, thermal limitations will reducethe power that can be handled to values less than the limita-tions imposed by secondary breakdown.
Figure 3. Darlington Circuit Schematic
BASE
NPNBD675, 675ABD677, 677ABD679, 679A
BD681
COLLECTOR
EMITTER
8.0 k 120
-
2SC3074
2002-07-23 1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074 High Current Switching Applications Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 s (typ) Complementary to 2SA1244 Maximum Ratings (Ta = 25C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 5 A
Base current IB 1 A
Ta = 25C 1.0 Collector power dissipation Tc = 25C
PC 20
W
Junction temperature Tj 150 C
Storage temperature range Tstg 55 to 150 C
Unit: mm
JEDEC
JEITA
TOSHIBA 2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)
-
2SC3074
2002-07-23 2
Electrical Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 50 V, IE = 0 1 A
Emitter cut-off current IEBO VEB = 5 V, IC = 0 1 A
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 V
hFE (1) (Note)
VCE = 1 V, IC = 1 A 70 240DC current gain
hFE (2) VCE = 1 V, IC = 3 A 30
Collector-emitter saturation voltage VCE (sat) IC = 3 A, IB = 0.15 A 0.2 0.4 V
Base-emitter saturation voltage VBE (sat) IC = 3 A, IB = 0.15 A 0.9 1.2 V
Transition frequency fT VCE = 4 V, IC = 1 A 120 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 80 pF
Turn-on time ton 0.1
Storage time tstg 1.0 Switching time
Fall time tf
IB1 = IB2 = 0.15 A, DUTY CYCLE 1%
0.1
s
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively. Year of manufacture: last decimal digit of the year of manufacture
20 s
INPUT
IB1
IB2
OUTPUT
VCC = 30 V
I B1
10
IB2
C3074 Product No.
Lot No.
hFE Classification
-
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 61 Publication Order Number:
TIP120/D
TIP120, TIP121, TIP122(NPN); TIP125, TIP126,TIP127 (PNP)
Preferred Devices
Plastic MediumPowerComplementary SiliconTransistors
Designed for generalpurpose amplifier and lowspeed switchingapplications.
Features
High DC Current Gain hFE = 2500 (Typ) @ IC
= 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125 = 80 Vdc (Min) TIP121, TIP126 = 100 Vdc (Min) TIP122, TIP127
Low CollectorEmitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
= 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors PbFree Packages are Available*
*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.
TO220ABCASE 221A
STYLE 1
Preferred devices are recommended choices for future useand best overall value.
MARKINGDIAGRAM
DARLINGTON5 AMPERE
COMPLEMENTARY SILICONPOWER TRANSISTORS
6080100 VOLTS, 65 WATTS
http://onsemi.com
12
3
4
TIP12x = Device Codex = 0, 1, 2, 5, 6, or 7A = Assembly LocationY = YearWW = Work WeekG = PbFree Package
TIP12xGAYWW
See detailed ordering and shipping information in the packagedimensions section on page 2 of this data sheet.
ORDERING INFORMATION
-
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
http://onsemi.com2
MAXIMUM RATINGS
Rating
Symbol
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127Unit
CollectorEmitter VoltageVCEO
60
80
100
Vdc
CollectorBase VoltageVCB
60
80
100
Vdc
EmitterBase VoltageVEB
5.0
Vdc
Collector Current Continuous Peak
IC
5.08.0
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25CDerate above 25C
PD
650.52
WW/C
Total Power Dissipation @ TA = 25CDerate above 25C
PD
2.00.016
WW/C
Unclamped Inductive Load Energy (Note 1)E
50
mJ
Operating and Storage Junction, Temperature RangeTJ, Tstg
65 to +150
C
THERMAL CHARACTERISTICSCharacteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCaseRJC
1.92
C/W
Thermal Resistance, JunctiontoAmbientRJA
62.5
C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limitvalues (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,damage may occur and reliability may be affected.1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100
ORDERING INFORMATION
Device Package Shipping
TIP120 TO220 50 Units / Rail
TIP120G TO220(PbFree)
50 Units / Rail
TIP121 TO220 50 Units / Rail
TIP121G TO220(PbFree)
50 Units / Rail
TIP122 TO220 50 Units / Rail
TIP122G TO220(PbFree)
50 Units / Rail
TIP125 TO220 50 Units / Rail
TIP125G TO220(PbFree)
50 Units / Rail
TIP126 TO220 50 Units / Rail
TIP126G TO220(PbFree)
50 Units / Rail
TIP127 TO220 50 Units / Rail
TIP127G TO220(PbFree)
50 Units / Rail
-
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
http://onsemi.com3
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)(IC = 100 mAdc, IB = 0) TIP120, TIP125
TIP121, TIP126TIP122, TIP127
VCEO(sus)
6080
100
Vdc
Collector Cutoff Current(VCE = 30 Vdc, IB = 0) TIP120, TIP125(VCE = 40 Vdc, IB = 0) TIP121, TIP126(VCE = 50 Vdc, IB = 0) TIP122, TIP127
ICEO
0.50.50.5
mAdc
Collector Cutoff Current(VCB = 60 Vdc, IE = 0) TIP120, TIP125(VCB = 80 Vdc, IE = 0) TIP121, TIP126(VCB = 100 Vdc, IE = 0) TIP122, TIP127
ICBO
0.20.20.2
mAdc
Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain(IC = 0.5 Adc, VCE = 3.0 Vdc)(IC = 3.0 Adc, VCE = 3.0 Vdc)
hFE
10001000
CollectorEmitter Saturation Voltage(IC = 3.0 Adc, IB = 12 mAdc)(IC = 5.0 Adc, IB = 20 mAdc)
VCE(sat)
2.04.0
Vdc
BaseEmitter On Voltage(IC = 3.0 Adc, VCE = 3.0 Vdc)
VBE(on)
2.5
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
4.0
Output Capacitance(VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127
TIP120, TIP121, TIP122
Cob
300200
pF
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%
80
00 20 40 60 80 100 120 160
Figure 1. Power Derating
T, TEMPERATURE (C)
PD
, P
OW
ER
DIS
SIP
AT
ION
(W
AT
TS
)
40
20
60
140
TC
4.0
0
2.0
1.0
3.0
TA
TA
TC
-
Complementary Silicon PlasticPower Transistors
. . . designed for use in general purpose amplifier and switchingapplications.
Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
Collector Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) BD243B, BD244B
= 100 Vdc (Min) BD243C, BD244C High Current Gain Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO220 AB Package
MAXIMUM RATINGS
Rating
Symbol
BD243BBD244B
BD243CBD244C
Unit
CollectorEmitter Voltage
VCEO
80
100
Vdc
CollectorBase Voltage
VCB
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current ContinuousPeak
IC
610
Adc
Base Current
IB
2.0
Adc
Total Device Dissipation@ TC = 25CDerate above 25C
PD
650.52
Watts
W/C
Operating and Storage JunctionTemperature Range
TJ, Tstg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RJC
1.92
C/W
80
60
40
20
00 20 40 60 80 100 120 140 160
Figure 1. Power Derating
TC, CASE TEMPERATURE (C)
PD
, PO
WE
R D
ISS
IPA
TIO
N (
WA
TT
S)
ON Semiconductor
Semiconductor Components Industries, LLC, 2002April, 2002 Rev. 10
1 Publication Order Number:BD243B/D
BD243B
BD243C
BD244B
BD244C
6 AMPEREPOWER TRANSISTORS
COMPLEMENTARYSILICON
80100 VOLTS65 WATTS
*ON Semiconductor Preferred Device
CASE 221A06TO220AB
NPN
PNP
*
*
STYLE 1:PIN 1. BASE
2. COLLECTOR3. EMITTER
4. COLLECTOR1
23
4
-
BD243B BD243C BD244B BD244C
http://onsemi.com2
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Sustaining Voltage (1)(IC = 30 mAdc IB = 0) BD243B BD244B
VCEO(sus)80
Vdc
(IC = 30 mAdc, IB = 0) BD243B, BD244BBD243C, BD244C
80100
Collector Cutoff Current(VCE = 60 Vdc, IB = 0) BD243B, BD243C, BD244B, BD244C
ICEO
0.7
mAdc
Collector Cutoff Current(VCE = 80 Vdc, VEB = 0) BD243B, BD244B(VCE = 100 Vdc, VEB = 0) BD243C, BD244C
ICES
400400
Adc
Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain(IC = 0.3 Adc, VCE = 4.0 Vdc)(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
3015
CollectorEmitter Saturation Voltage(IC = 6.0 Adc, IB = 1.0 Adc)
VCE(sat)
1.5
Vdc
BaseEmitter On Voltage(IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.0
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (2)(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
MHz
SmallSignal Current Gain(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
(1) Pulse Test: Pulsewidth 300 s, Duty Cycle 2.0%.(2) fT = hfe ftest
Figure 2. Switching Time Test Circuit
2.0
0.06
Figure 3. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
t, T
IME
(
s)
1.0
0.7
0.5
0.3
0.1
0.07
0.020.1 0.2 0.4 0.6 2.0 6.0
td @ VBE(off) = 5.0 V
TJ = 25CVCC = 30 V
IC/IB = 10+ 11 V
0
VCC 30 V
SCOPE
RB
4 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
RC
tr
0.03
0.05
1.0 4.0
D1 MUST BE FAST RECOVERY TYPE eg.
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
25 s
9.0 VD151
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.2
-
Complementary Silicon PlasticPower Transistors
. . . designed for use in generalpurpose amplifier and switchingapplications.
DC Current Gain Specified to 10 Amperes High Current Gain Bandwidth Product
fT = 2.0 MHz (Min) @ IC = 500 mAdc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
60
Vdc
CollectorBase Voltage
VCB
70
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6.0
Adc
Total Power Dissipation @ TC = 25CDerate above 25C
MJE3055T, MJE2955T
PD
75
0.6
Watts
W/C
Operating and Storage JunctionTemperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
1.67
C/W
Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
10
5.0
Figure 1. ActiveRegion Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.2
0.120 30
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25C (D = 0.1)
I C, C
OLL
EC
TO
R C
UR
RE
NT
(AM
P)
dc
7.0 10
5.0 ms 1.0ms
50 60
0.5
7.0
3.0
0.7
0.3
TJ = 150C
100sThere are two limitations on the power handling ability of
a transistor: average junction temperature and secondbreakdown. Safe operating area curves indicate IC VCElimits of the transistor that must be observed for reliableoperation; i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150C. TC isvariable depending on conditions. Second breakdown pulselimits are valid for duty cycles to 10% provided TJ(pk) 150C. At high case temperatures, thermal limitationswill reduce the power that can be handled to values less thanthe limitations imposed by second breakdown. (SeeAN415A)
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2002April, 2002 Rev. 4
1 Publication Order Number:MJE2955T/D
MJE2955T
MJE3055T
10 AMPERECOMPLEMENTARY
SILICONPOWER TRANSISTORS
60 VOLTS75 WATTS
*ON Semiconductor Preferred Device
*PNP
NPN*
CASE 221A09TO220AB
STYLE 1:PIN 1. BASE
2. COLLECTOR3. EMITTER
4. COLLECTOR1
23
4
-
MJE2955T MJE3055T
http://onsemi.com2
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0)
VCEO(sus)
60
VdcCollector Cutoff Current (VCE = 30 Vdc, IB = 0)
ICEO
700
Adc
Collector Cutoff Current(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
ICEX
1.05.0
mAdc
Collector Cutoff Current(VCB = 70 Vdc, IE = 0)(VCB = 70 Vdc, IE = 0, TC = 150C)
ICBO
1.010
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (1)(IC = 4.0 Adc, VCE = 4 0 Vdc)(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
205.0
100
CollectorEmitter Saturation Voltage (1)(IC = 4.0 Adc, IB = 0.4 Adc)(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
1.18.0
Vdc
BaseEmitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.8
Vdc
DYNAMIC CHARACTERISTICS
CurrentGainBandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
fT
2.0
MHz
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 20%.
-
High-Power IndustrialTransistors
NPN silicon power transistor designed for applications in industrialand commercial equipment including high fidelity audio amplifiers,series and shunt regulators and power switches.
Collector Emitter Sustaining Voltage VCEO(sus) = 140 Vdc (Min)
Excellent Second Breakdown Capability
*MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
140
Vdc
CollectorBase Voltage
VCB
160
Vdc
EmitterBase Voltage
VEB
7.0
Vdc
Collector Current ContinuousCollector Current Peak
IC
1015**
Adc
Base Current ContinuousPeak
IB
7.0
Adc
Total Power Dissipation @ TC = 25CDerate above 25C
PD
1170.67
WattsW/C
Operating and Storage JunctionTemperature Range
TJ, Tstg
65 to +200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RJC
1.5
C/W
* Indicates JEDEC Registered Data.** This data guaranteed in addition to JEDEC registered data.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001March, 2001 Rev. 10
1 Publication Order Number:2N3442/D
2N3442
10 AMPEREPOWER TRANSISTOR
NPN SILICON140 VOLTS117 WATTS
CASE 107TO204AA
(TO3)
-
2N3442
http://onsemi.com2
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage(IC = 200 mAdc, IB = 0)
VCEO(sus)
140
Vdc
Collector Cutoff Current(VCE = 140 Vdc, IB = 0)
ICEO
200
mAdc
Collector Cutoff Current(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)
ICEX
5.030
mAdc
Emitter Cutoff Current(VBE = 7.0 Vdc, IC = 0)
IEBO
5.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain(IC = 3.0 Adc, VCE = 4.0 Vdc)(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
207.5
70
CollectorEmitter Saturation Voltage(IC = 10 Adc, IB = 2.0 Adc)
VCE(sat)
5.0
Vdc
BaseEmitter On Voltage(IC = 10 Adc, VCE = 4.0 Vdc)
VBE(on)
5.7
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (2)(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)
fT
80
kHz
SmallSignal Current Gain(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
12
72
*Indicates JEDEC Registered Data.NOTES:
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.2. fT = |hfe| ftest
1.0
00 25 50 75 100 125 150 175 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (C)
/PD
(MA
X),
PO
WE
R D
ISS
IPA
TIO
N (
NO
RM
ALI
ZE
D)
0.8
0.6
0.4
0.2
PD
-
312 Motorola Bipolar Power Transistor Device Data
. . . designed for mediumspeed switching and amplifier applications. These devicesfeature:
Total Switching Time at 3 A typically 1.15 s Gain Ranges Specified at 1 A and 3 A Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A Excellent Safe Operating Areas Complement to 2N379192
MAXIMUM RATINGS
Rating
Symbol
2N3715
2N3716
Unit
CollectorEmitter Voltage
VCEO
60
80
Volts
CollectorBase Voltage
VCB
80
100
Volts
EmitterBase Voltage
VEB
7.0
7.0
Volts
Collector Current
IC
10
10
Amps
Base Current
IB
4.0
4.0
Amps
Power Dissipation
PD
150
150
Watts
Thermal Resistance
JC
1.17
1.17
C/W
Operating Junction and Storage Temperature Range
TJ, Tstg
65 to +200
C
Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed.
140
120
100
80
60
40
0
20
0 25 50 75 100 125 150 175 200
Figure 1. PowerTemperature Derating Curve
TC, CASE TEMPERATURE (C)
P D, P
OW
ER D
ISSI
PATI
ON
(WAT
TS)
160
SEMICONDUCTOR TECHNICAL DATA
Order this documentby 2N3715/D
Motorola, Inc. 1995
10 AMPEREPOWER TRANSISTORS
SILICON NPN6080 VOLTS
150 WATTS
CASE 107TO204AA
(TO3)
REV 7
-
313Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
EmitterBase Cutoff Current(VEB = 7.0 Vdc) All Types
IEBO
5.0
mAdc
CollectorEmitter Cutoff Current(VCE = 80 Vdc, VBE = 1.5 Vdc) 2N3715(VCE = 100 Vdc, VBE = 1.5 Vdc) 2N3716(VCE = 60 Vdc, VBE = 1.5 Vdc, TC = 150C) 2N3715(VCE = 80 Vdc, VBE = 1.5 Vdc, TC = 150C) 2N3716
ICEX
1.01.01010
mAdc
CollectorEmitter Sustaining Voltage (1)(IC = 200 mAdc, IB = 0) 2N3715
2N3716
VCEO(sus)*
6080
Vdc
DC Current Gain (1)(IC = 1.0 Adc, VCE = 2.0 Vdc) 2N3715, 2N3716(IC = 3.0 Adc, VCE = 2.0 Vdc) 2N3715, 2N3716
hFE*
5030
150
CollectorEmitter Saturation Voltage (1)(IC = 5.0 Adc, IB = 0.5 Adc) 2N3715, 2N3716
VCE(sat)*
0.8
Vdc
BaseEmitter Saturation Voltage (1)(IC = 5.0 Adc, IB = 0.5 Adc) 2N3715, 2N3716
VBE(sat)*
1.5
Vdc
BaseEmitter Voltage (1)(IC = 3.0 Adc, VCE = 2.0 Vdc) All Types
VBE*
1.5
Vdc
Small Signal Current Gain(VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz) All Types
hfe
4.0
Switching Times (Figure 2)
Typ
s
(IC = 5.0 A, IB1 = IB2 = 0.5 Adc)Rise TimeStorage TimeFall Time
trtstf
0.450.30.4
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
1.5
0.1
Figure 2. Typical Switching Times
IC, COLLECTOR CURRENT (AMPS)
1.0
0.7
0.5
0.3
0.2
0.10.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
SWIT
CH
ING
TIM
ES (
s)
ts
tf
tr
IB1 = IB2
+11.5 Vton ~ 30 s
9 V
TEST CIRCUIT
~ 4.8 ms
WAVE SHAPEAT POINT A
IC = 5 A, IB1 = IB2 = 0.5 Af 150 cps DUTY CYCLE 2%
+ 30 V
6 4 W
900
100
4 V
900
100 1 W
20 1 WA
Hg RELAYS
+ 62 V 9 V100
toff~ 1.7 ms
-
A
-
A
-
2SC5199
2004-07-07 1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5199 Power Amplifier Applications High breakdown voltage: VCEO = 160 V (min) Complementary to 2SA1942 Suitable for use in 80-W high fidelity audio amplifiers output stage. Maximum Ratings (Tc = 25C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 160 V
Collector-emitter voltage VCEO 160 V
Emitter-base voltage VEBO 5 V
Collector current IC 12 A
Base current IB 1.2 A
Collector power dissipation
(Tc = 25C) PC 120 W
Junction temperature Tj 150 C
Storage temperature range Tstg 55 to 150 C
Electrical Characteristics (Tc = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 160 V, IE = 0 5.0 A
Emitter cut-off current IEBO VEB = 5 V, IC = 0 5.0 A
Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 160 V
hFE (1) (Note)
VCE = 5 V, IC = 1 A 55 160 DC current gain
hFE (2) VCE = 5 V, IC = 6 A 35 74
Collector-emitter saturation voltage VCE (sat) IC = 8 A, IB = 0.8 A 0.35 2.5 V
Base-emitter voltage VBE VCE = 5 V, IC = 6 A 1.0 1.5 V
Transition frequency fT VCE = 5 V, IC = 1 A 30 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 170 pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Unit: mm
JEDEC
JEITA
TOSHIBA 2-21F1A
Weight: 9.75 g (typ.)
-
A
-
A
-
Complementary SiliconHigh-Power Transistors
. . . PowerBase complementary transistors designed for highpower audio, stepping motor and other linear applications. Thesedevices can also be used in power switching circuits such as relay orsolenoid drivers, dctodc converters, inverters, or for inductive loadsrequiring higher safe operating area than the 2N3055.
CurrentGain BandwidthProduct @ IC = 1.0 AdcfT = 0.8 MHz (Min) NPN
= 2.2 MHz (Min) PNP Safe Operating Area Rated to 60 V and 120 V, Respectively
*MAXIMUM RATINGS
Rating
Symbol
2N3055A
MJ15015MJ15016
Unit
CollectorEmitter Voltage
VCEO
60
120
Vdc
CollectorBase Voltage
VCBO
100
200
Vdc
CollectorEmitter Voltage BaseReversed Biased
VCEV
100
200
Vdc
EmitterBase Voltage
VEBO
7.0
Vdc
Collector Current Continuous
IC
15
Adc
Base Current
IB
7.0
Adc
Total Device Dissipation @ TC = 25CDerate above 25C
PD
1150.65
1801.03
WattsW/C
Operating and Storage JunctionTemperature Range
TJ, Tstg
65 to +200
C
THERMAL CHARACTERISTICSCharacteristic
Symbol
Max
Max
Unit
Thermal Resistance, Junction to Case
RJC
1.52
0.98
C/W
*Indicates JEDEC Registered Data. (2N3055A)
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001May, 2001 Rev. 4
1 Publication Order Number:2N3055A/D
2N3055A
MJ15015
MJ15016
*ON Semiconductor Preferred Device
15 AMPERECOMPLEMENTARY
SILICONPOWER TRANSISTORS
60, 120 VOLTS115, 180 WATTS
CASE 107TO204AA
(TO3)
*
*
NPN
PNP
-
2N3055A MJ15015 MJ15016
http://onsemi.com3
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
UnitOFF CHARACTERISTICS (1)
*CollectorEmitter Sustaining Voltage 2N3055A(IC = 200 mAdc, IB = 0) MJ15015, MJ15016
VCEO(sus)
60120
Vdc
Collector Cutoff Current(VCE = 30 Vdc, VBE(off) = 0 Vdc) 2N3055A(VCE = 60 Vdc, VBE(off) = 0 Vdc) MJ15015, MJ15016
ICEO
0.70.1
mAdc
*Collector Cutoff Current 2N3055A(VCEV = Rated Value, VBE(off) = 1.5 Vdc) MJ15015, MJ15016
ICEV
5.01.0
mAdc
Collector Cutoff Current(VCEV = Rated Value, VBE(off) = 1.5 Vdc, 2N3055A
TC = 150C) MJ15015, MJ15016
ICEV
306.0
mAdc
Emitter Cutoff Current 2N3055A(VEB = 7.0 Vdc, IC = 0) MJ15015, MJ15016
IEBO
5.00.2
mAdc
*SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased(t = 0.5 s nonrepetitive) 2N3055A
(VCE = 60 Vdc) MJ15015, MJ15016
IS/b
1.953.0
Adc
*ON CHARACTERISTICS (1)
DC Current Gain(IC = 4.0 Adc, VCE = 2.0 Vdc)(IC = 4.0 Adc, VCE = 4.0 Vdc)(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
10205.0
7070
CollectorEmitter Saturation Voltage(IC = 4.0 Adc, IB = 400 mAdc)(IC = 10 Adc, IB = 3.3 Adc)(IC = 15 Adc, IB = 7.0 Adc)
VCE(sat)
1.13.05.0
Vdc
BaseEmitter On Voltage(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
0.7
1.8
Vdc
*DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product 2N3055A, MJ15015(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) MJ15016
fT
0.82.2
6.018
MHz
Output Capacitance(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
60
600
pF
*SWITCHING CHARACTERISTICS (2N3055A only)
RESISTIVE LOAD
Delay Time
td
0.5
s
Rise Time
(VCC = 30 Vdc, IC = 4.0 Adc,IB1 = IB2 = 0 4 Adc
tr
4.0
s
Storage Time
IB1 = IB2 = 0.4 Adc,tp = 25 s Duty Cycle 2%
ts
3.0
s
Fall Time
y y
tf
6.0
s
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.*Indicates JEDEC Registered Data. (2N3055A)
-
Semiconductor Components Industries, LLC, 2005October, 2005 Rev. 9
1 Publication Order Number:MJL3281A/D
MJL3281A (NPN) MJL1302A (PNP)
Preferred Devices
Complementary BipolarPower Transistors
Features Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO High Frequency PbFree Packages are AvailableBenefits Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier BandwithApplications HighEnd Consumer Audio Products
Home AmplifiersHome Receivers
Professional Audio AmplifiersTheater and Stadium Sound SystemsPublic Address Systems (PAs)
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 260 Vdc
CollectorBase Voltage VCBO 260 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
CollectorEmitter Voltage 1.5 V VCEX 260 Vdc
Collector Current Continuous Peak (Note 1)
IC 1525
Adc
Base Current Continuous IB 1.5 Adc
Total Power Dissipation @ TC = 25CDerate Above 25C
PD 2001.43
WattsW/C
Operating and Storage JunctionTemperature Range
TJ, Tstg 65 to+150
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase RJC 0.625 C/W
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
MJLxxxxAAYYWWG
Device Package Shipping
ORDERING INFORMATION
MJL3281A TO264
TO264CASE 340G
STYLE 2
25 Units/Rail
21
15 AMPERESCOMPLEMENTARYSILICON POWERTRANSISTORS
260 VOLTS200 WATTS
3
MARKING DIAGRAM
xxxx = 3281 or 1302A = Location CodeYY = YearWW = Work WeekG = PbFree Package
Preferred devices are recommended choices for future useand best overall value.
MJL1302A TO264 25 Units/Rail
1BASE
2 COLLECTOR
3EMITTER
http://onsemi.com
MJL3281AG TO264(PbFree)
25 Units/Rail
MJL1302AG TO264(PbFree)
25 Units/Rail
-
MJL3281A (NPN) MJL1302A (PNP)
http://onsemi.com2
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage(IC = 100 mAdc, IB = 0)
VCEO(sus)260
Vdc
Collector Cutoff Current(VCB = 260 Vdc, IE = 0)
ICBO 50
Adc
Emitter Cutoff Current(VEB = 5 Vdc, IC = 0)
IEBO 5
Adc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased(VCE = 50 Vdc, t = 1 s (nonrepetitive)(VCE = 100 Vdc, t = 1 s (nonrepetitive)
IS/b41
Adc
ON CHARACTERISTICS
DC Current Gain(IC = 500 mAdc, VCE = 5 Vdc)(IC = 1 Adc, VCE = 5 Vdc)(IC = 3 Adc, VCE = 5 Vdc)(IC = 5 Adc, VCE = 5 Vdc)(IC = 8 Adc, VCE = 5 Vdc)
hFE7575757545
150150150150
CollectorEmitter Saturation Voltage(IC = 10 Adc, IB = 1 Adc)
VCE(sat) 3
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
fT30
MHz
Output Capacitance(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob 600
pF